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GT20J341,S4X(S Технические параметры
Toshiba Semiconductor and Storage GT20J341,S4X(S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Surface Mount | NO | |
| Supplier Device Package | TO-220SIS | |
| Mfr | Toshiba Semiconductor and Storage | |
| Package | Tube | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 20 A | |
| Test Conditions | 300V, 20A, 33Ohm, 15V | |
| Collector-Emitter Saturation Voltage | 1.5 | |
| Operating Temperature (Max.) | 150C | |
| Operating Temperature Classification | Military | |
| Package Type | TO-220SIS | |
| Collector Current (DC) | 20(A) | |
| Rad Hardened | No | |
| Operating Temperature (Min.) | -55C | |
| Gate to Emitter Voltage (Max) | ±25(V) | |
| Mounting | Through Hole | |
| Maximum Gate Emitter Voltage | - 25 V, + 25 V | |
| Pd - Power Dissipation | 45 W | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 50 | |
| Continuous Collector Current at 25 C | 20 A | |
| Mounting Styles | Through Hole | |
| Manufacturer | Toshiba | |
| Brand | Toshiba | |
| Continuous Collector Current Ic Max | 80 A | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Operating Temperature-Max | 150 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Rohs Code | Yes | |
| Manufacturer Part Number | GT20J341,S4X(S | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 2.3 | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | Magazine | |
| ECCN Code | EAR99 | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 +Tab | |
| Configuration | Single | |
| Power Dissipation | 45 | |
| Input Type | Standard | |
| Power - Max | 45 W | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Channel Type | N | |
| Power Dissipation-Max (Abs) | 45 W | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A | |
| Collector Current-Max (IC) | 20 A | |
| Continuous Collector Current | 20 | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 600 V | |
| Current - Collector Pulsed (Icm) | 80 A | |
| Td (on/off) @ 25°C | 60ns/240ns | |
| Switching Energy | 500μJ (on), 400μJ (off) | |
| Gate-Emitter Voltage-Max | 25 V | |
| Reverse Recovery Time (trr) | 90 ns | |
| Product Category | IGBT Transistors |
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