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GT30J341,Q Технические параметры

Toshiba Semiconductor and Storage  GT30J341,Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Mfr Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 59 A
Test Conditions 300V, 30A, 24Ohm, 15V
Base Product Number GT30J341
Maximum Gate Emitter Voltage - 25 V, + 25 V
Pd - Power Dissipation 230 W
Maximum Operating Temperature + 175 C
Collector-Emitter Saturation Voltage 1.5 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 100
Continuous Collector Current at 25 C 59 A
Mounting Styles Through Hole
Manufacturer Toshiba
Brand Toshiba
Continuous Collector Current Ic Max 120 A
RoHS Details
Свойство продукта Значение свойства
Collector- Emitter Voltage VCEO Max 600 V
Package Description ,
Manufacturer Part Number GT30J341,Q
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Risk Rank 5.67
Series -
Operating Temperature 175°C (TJ)
Packaging Tray
Subcategory IGBTs
Technology Si
Reach Compliance Code unknown
Configuration Single
Input Type Standard
Power - Max 230 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Current - Collector Pulsed (Icm) 120 A
Td (on/off) @ 25°C 80ns/280ns
Switching Energy 800μJ (on), 600μJ (off)
Reverse Recovery Time (trr) 50 ns
Product Category IGBT Transistors
Просмотр сходства
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