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GT30N135SRA,S1E Технические параметры

Toshiba Semiconductor and Storage  GT30N135SRA,S1E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 60 A
Test Conditions 300V, 60A, 39Ohm, 15V
Maximum Gate Emitter Voltage - 25 V, 25 V
Pd - Power Dissipation 348 W
Maximum Operating Temperature + 175 C
Collector-Emitter Saturation Voltage 2.15 V
Minimum Operating Temperature - 55 C
Continuous Collector Current at 25 C 60 A
Свойство продукта Значение свойства
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 1.35 kV
Series -
Operating Temperature 175°C (TJ)
Technology Si
Configuration Single
Input Type Standard
Power - Max 348 W
Voltage - Collector Emitter Breakdown (Max) 1350 V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 60A
IGBT Type -
Gate Charge 270 nC
Current - Collector Pulsed (Icm) 120 A
Td (on/off) @ 25°C -
Switching Energy -, 1.3mJ (off)
Просмотр сходства
GT30N135SRA,S1E brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, GT30N135SRA,S1E reference price.Toshiba Semiconductor and Storage. GT30N135SRA,S1E parameters, GT30N135SRA,S1E Datasheet PDF and pin diagram description download.You can use the GT30N135SRA,S1E Transistors - IGBTs - Single, DSP Datesheet PDF, find GT30N135SRA,S1E pin diagram and circuit diagram and usage method of function,GT30N135SRA,S1E electronics tutorials.You can download from the Anli.