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GT40RR21(STA1,E Технические параметры

Toshiba Semiconductor and Storage  GT40RR21(STA1,E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 40 A
Test Conditions 280V, 40A, 10Ohm, 20V
Base Product Number GT40RR21
Maximum Gate Emitter Voltage - 25 V, + 25 V
Pd - Power Dissipation 230 W
Maximum Operating Temperature + 175 C
Collector-Emitter Saturation Voltage 1.6 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 25
Continuous Collector Current at 25 C 40 A
Mounting Styles Through Hole
Manufacturer Toshiba
Brand Toshiba
Свойство продукта Значение свойства
Continuous Collector Current Ic Max 200 A
RoHS Details
Collector- Emitter Voltage VCEO Max 1.35 kV
Series -
Operating Temperature 175°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single
Input Type Standard
Power - Max 230 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 40A
IGBT Type -
Current - Collector Pulsed (Icm) 200 A
Td (on/off) @ 25°C -
Switching Energy -, 540μJ (off)
Reverse Recovery Time (trr) 600 ns
Product Category IGBT Transistors
Просмотр сходства
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