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GT40WR21,Q Технические параметры

Toshiba Semiconductor and Storage  GT40WR21,Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Mfr Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 40 A
Test Conditions -
Maximum Gate Emitter Voltage - 25 V, + 25 V
Pd - Power Dissipation 375 W
Maximum Operating Temperature + 175 C
Collector-Emitter Saturation Voltage 2.9 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 100
Continuous Collector Current at 25 C 40 A
Mounting Styles Through Hole
Manufacturer Toshiba
Brand Toshiba
Свойство продукта Значение свойства
Continuous Collector Current Ic Max 80 A
RoHS Details
Collector- Emitter Voltage VCEO Max 1.8 kV
Series -
Operating Temperature 175°C (TJ)
Packaging Tray
Subcategory IGBTs
Technology Si
Configuration Single
Input Type Standard
Power - Max 375 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 1350 V
Vce(on) (Max) @ Vge, Ic 5.9V @ 15V, 40A
IGBT Type -
Current - Collector Pulsed (Icm) 80 A
Td (on/off) @ 25°C -
Switching Energy -
Product Category IGBT Transistors
Просмотр сходства
GT40WR21,Q brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, GT40WR21,Q reference price.Toshiba Semiconductor and Storage. GT40WR21,Q parameters, GT40WR21,Q Datasheet PDF and pin diagram description download.You can use the GT40WR21,Q Transistors - IGBTs - Single, DSP Datesheet PDF, find GT40WR21,Q pin diagram and circuit diagram and usage method of function,GT40WR21,Q electronics tutorials.You can download from the Anli.