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GT50JR21(STA1,E,S) Технические параметры

Toshiba Semiconductor and Storage  GT50JR21(STA1,E,S) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 50 A
Test Conditions -
Collector-Emitter Saturation Voltage 1.45
RoHS Compliant
Свойство продукта Значение свойства
Series -
Operating Temperature 175°C (TJ)
Power Dissipation 230
Input Type Standard
Power - Max 230 W
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Continuous Collector Current 50
IGBT Type -
Current - Collector Pulsed (Icm) 100 A
Td (on/off) @ 25°C -
Switching Energy -
Просмотр сходства
GT50JR21(STA1,E,S) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, GT50JR21(STA1,E,S) reference price.Toshiba Semiconductor and Storage. GT50JR21(STA1,E,S) parameters, GT50JR21(STA1,E,S) Datasheet PDF and pin diagram description download.You can use the GT50JR21(STA1,E,S) Transistors - IGBTs - Single, DSP Datesheet PDF, find GT50JR21(STA1,E,S) pin diagram and circuit diagram and usage method of function,GT50JR21(STA1,E,S) electronics tutorials.You can download from the Anli.