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GT50JR22(STA1,E,S) Технические параметры

Toshiba Semiconductor and Storage  GT50JR22(STA1,E,S) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Supplier Device Package TO-3P(N)
Test Conditions -
Current-Collector (Ic) (Max) 50 A
Product Status Active
Package Tube
Mfr Toshiba Semiconductor and Storage
Collector-Emitter Saturation Voltage 1.55
RoHS Compliant
Maximum Gate Emitter Voltage - 25 V, + 25 V
Pd - Power Dissipation 230 W
Maximum Operating Temperature + 175 C
Unit Weight 0.162260 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 25
Continuous Collector Current at 25 C 50 A
Mounting Styles Through Hole
Manufacturer Toshiba
Brand Toshiba
Collector- Emitter Voltage VCEO Max 600 V
Свойство продукта Значение свойства
Operating Temperature 175°C (TJ)
Series -
Packaging Tube
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Subcategory IGBTs
Technology Si
Configuration Single
Element Configuration Single
Power Dissipation 230
Input Type Standard
Power - Max 230 W
Product Type IGBT Transistors
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 50 A
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Continuous Collector Current 50
IGBT Type -
Current - Collector Pulsed (Icm) 100 A
Td (on/off) @ 25°C -
Switching Energy -
Product Category IGBT Transistors
Lead Free Lead Free
Просмотр сходства
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