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GT50N322A Технические параметры
Toshiba Semiconductor and Storage GT50N322A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-3P(N) | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Toshiba Semiconductor and Storage | |
| Package | Tube | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 50 A | |
| Test Conditions | - | |
| Maximum Gate Emitter Voltage | - 25 V, + 25 V | |
| Pd - Power Dissipation | 156 W | |
| Maximum Operating Temperature | + 150 C | |
| Collector-Emitter Saturation Voltage | 2.2 V | |
| Unit Weight | 0.162260 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 50 | |
| Continuous Collector Current at 25 C | 50 A | |
| Mounting Styles | Through Hole | |
| Manufacturer | Toshiba | |
| Brand | Toshiba | |
| Continuous Collector Current Ic Max | 120 A | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1 kV | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 330 ns | |
| Turn-off Time-Nom (toff) | 700 ns | |
| Operating Temperature-Max | 150 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer Part Number | GT50N322A | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 2.12 | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | Tube | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 156 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A | |
| Collector Current-Max (IC) | 50 A | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Current - Collector Pulsed (Icm) | 120 A | |
| Td (on/off) @ 25°C | - | |
| Switching Energy | - | |
| Reverse Recovery Time (trr) | 800 ns | |
| Product Category | IGBT Transistors |
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