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HN1A01FU-Y,LF Технические параметры
Toshiba Semiconductor and Storage HN1A01FU-Y,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Collector-Emitter Saturation Voltage | -100mV | |
| hFEMin | 120 | |
| Operating Temperature | 125°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 200mW | |
| Polarity | PNP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power - Max | 200mW | |
| Gain Bandwidth Product | 80MHz | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 150mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | |
| Max Breakdown Voltage | 50V | |
| Collector Base Voltage (VCBO) | -50V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Continuous Collector Current | -150mA | |
| Height | 900μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | RoHS Compliant |
Индекс :
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