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HN1C01FYTE85LF Технические параметры

Toshiba Semiconductor and Storage  HN1C01FYTE85LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Collector-Emitter Breakdown Voltage 50V
hFEMin 120
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Свойство продукта Значение свойства
Polarity NPN
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 80MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Просмотр сходства
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