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- HN4B102J(TE85L,F)
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HN4B102J(TE85L,F) Технические параметры
Toshiba Semiconductor and Storage HN4B102J(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74A, SOT-753 | |
| Surface Mount | YES | |
| Supplier Device Package | SMV | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Toshiba Semiconductor and Storage | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 1.8A, 2A | |
| Collector- Emitter Voltage VCEO Max | 30 V | |
| RoHS | Details | |
| DC Current Gain hFE Max | 500 | |
| Maximum DC Collector Current | 8 A | |
| Brand | Toshiba | |
| Manufacturer | Toshiba | |
| Mounting Styles | SMD/SMT | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Minimum Operating Temperature | - 55 C | |
| DC Collector/Base Gain hfe Min | 200 | |
| Maximum Operating Temperature | + 150 C | |
| Transistor Polarity | NPN, PNP | |
| Pd - Power Dissipation | 1.1 W | |
| Emitter- Base Voltage VEBO | 7 V | |
| Package Description | SMALL OUTLINE, R-PDSO-G5 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | HN4B102J(TE85L,F) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Samacsys Description | Silicon PNP / NPN Epitaxial Type Transistor | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 5.76 | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G5 | |
| Configuration | Dual | |
| Power - Max | 750mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN AND PNP | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN, PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 200mA, 2V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 140mV @ 20mA, 600mA, 200mV @ 20mA, 600mA | |
| Voltage - Collector Emitter Breakdown (Max) | 30V | |
| Frequency - Transition | - | |
| Collector Base Voltage (VCBO) | 60 V, 30 V | |
| Collector Current-Max (IC) | 2 A | |
| DC Current Gain-Min (hFE) | 40 | |
| Continuous Collector Current | - 1.8 A, 2 A | |
| Collector-Emitter Voltage-Max | 30 V | |
| VCEsat-Max | 0.14 V | |
| Product Category | Bipolar Transistors - BJT |
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