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HN4C51J(TE85L,F) Технические параметры
Toshiba Semiconductor and Storage HN4C51J(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74A, SOT-753 | |
| Number of Pins | 5Pins | |
| Collector-Emitter Breakdown Voltage | 120V | |
| hFEMin | 200 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 300mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Polarity | NPN | |
| Element Configuration | Dual | |
| Power - Max | 300mW | |
| Gain Bandwidth Product | 100MHz | |
| Transistor Type | 2 NPN (Dual) Common Base | |
| Collector Emitter Voltage (VCEO) | 120V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | |
| Max Breakdown Voltage | 120V | |
| Collector Base Voltage (VCBO) | 120V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
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