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JDP2S02AFS(TPL3) Технические параметры

Toshiba Semiconductor and Storage  JDP2S02AFS(TPL3) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 12 Weeks
Package / Case 2-SMD, Flat Lead
Surface Mount YES
Number of Pins 2Pins
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 1Ohm
Свойство продукта Значение свойства
Capacitance 300FF
Reach Compliance Code unknown
Max Current Rating 50mA
Element Configuration Single
Diode Type PIN - Single
Capacitance @ Vr, F 0.4pF @ 1V 1MHz
Reverse Voltage (DC) 30V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.3pF
Resistance @ If, F 1.5Ohm @ 10mA 100MHz
Diode Res Test Current 10mA
Diode Res Test Frequency 100MHz
RoHS Status RoHS Compliant
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JDP2S02AFS(TPL3) Документы

JDP2S02AFS(TPL3) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, JDP2S02AFS(TPL3) reference price.Toshiba Semiconductor and Storage. JDP2S02AFS(TPL3) parameters, JDP2S02AFS(TPL3) Datasheet PDF and pin diagram description download.You can use the JDP2S02AFS(TPL3) Diodes - RF, DSP Datesheet PDF, find JDP2S02AFS(TPL3) pin diagram and circuit diagram and usage method of function,JDP2S02AFS(TPL3) electronics tutorials.You can download from the Anli.