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MT3S111P(TE12L,F) Технические параметры

Toshiba Semiconductor and Storage  MT3S111P(TE12L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Configuration Single
Power - Max 1W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 10.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Transition Frequency 6000MHz
Frequency - Transition 8GHz
Power Dissipation-Max (Abs) 0.3W
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
RoHS Status RoHS Compliant
Просмотр сходства
MT3S111P(TE12L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, MT3S111P(TE12L,F) reference price.Toshiba Semiconductor and Storage. MT3S111P(TE12L,F) parameters, MT3S111P(TE12L,F) Datasheet PDF and pin diagram description download.You can use the MT3S111P(TE12L,F) Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MT3S111P(TE12L,F) pin diagram and circuit diagram and usage method of function,MT3S111P(TE12L,F) electronics tutorials.You can download from the Anli.