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MT3S16U(TE85L,F) Технические параметры
Toshiba Semiconductor and Storage MT3S16U(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Weight | 6.208546mg | |
| Collector-Emitter Breakdown Voltage | 5V | |
| hFEMin | 80 | |
| Operating Temperature | 125°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 100mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 4GHz | |
| Element Configuration | Single | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 5V | |
| Max Collector Current | 60mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 1V | |
| Gain | 4.5dBi | |
| Transition Frequency | 2000MHz | |
| Max Breakdown Voltage | 5V | |
| Collector Base Voltage (VCBO) | 10V | |
| Emitter Base Voltage (VEBO) | 2V | |
| Continuous Collector Current | 60mA | |
| Noise Figure (dB Typ @ f) | 2.4dB @ 1GHz | |
| RoHS Status | RoHS Compliant |
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