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MT3S20TU(TE85L) Технические параметры

Toshiba Semiconductor and Storage  MT3S20TU(TE85L) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Collector-Emitter Breakdown Voltage 12V
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 900mW
Reach Compliance Code unknown
Свойство продукта Значение свойства
Element Configuration Single
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Gain 12dB
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 80mA
Noise Figure (dB Typ @ f) 1.45dB @ 20mA, 5V
RoHS Status RoHS Compliant
Просмотр сходства
MT3S20TU(TE85L) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, MT3S20TU(TE85L) reference price.Toshiba Semiconductor and Storage. MT3S20TU(TE85L) parameters, MT3S20TU(TE85L) Datasheet PDF and pin diagram description download.You can use the MT3S20TU(TE85L) Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MT3S20TU(TE85L) pin diagram and circuit diagram and usage method of function,MT3S20TU(TE85L) electronics tutorials.You can download from the Anli.