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RFM01U7P(TE12L,F) Технические параметры

Toshiba Semiconductor and Storage  RFM01U7P(TE12L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Package / Case TO-243AA
Surface Mount YES
Operating Temperature (Max.) 150°C
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 3W
Reach Compliance Code unknown
Current Rating 1A
Frequency 520MHz
Свойство продукта Значение свойства
Configuration Single
Operating Mode ENHANCEMENT MODE
Current - Test 100mA
Drain to Source Voltage (Vdss) 20V
Transistor Type N-Channel
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 10V
Gain 10.8dB
Drain Current-Max (Abs) (ID) 1A
Power - Output 1.2W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 7.2V
RoHS Status RoHS Compliant
Просмотр сходства
RFM01U7P(TE12L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, RFM01U7P(TE12L,F) reference price.Toshiba Semiconductor and Storage. RFM01U7P(TE12L,F) parameters, RFM01U7P(TE12L,F) Datasheet PDF and pin diagram description download.You can use the RFM01U7P(TE12L,F) Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find RFM01U7P(TE12L,F) pin diagram and circuit diagram and usage method of function,RFM01U7P(TE12L,F) electronics tutorials.You can download from the Anli.