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RFM04U6P(TE12L,F) Технические параметры

Toshiba Semiconductor and Storage  RFM04U6P(TE12L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Factory Lead Time 18 Weeks
Package / Case TO-243AA
Surface Mount YES
Operating Temperature (Max.) 150°C
Usage Level Automotive grade
Packaging Cut Tape (CT)
Published 2003
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 7W
Reach Compliance Code unknown
Current Rating 2A
Свойство продукта Значение свойства
Frequency 470MHz
Configuration Single
Operating Mode ENHANCEMENT MODE
Current - Test 500mA
Drain to Source Voltage (Vdss) 16V
Transistor Type N-Channel
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 3V
Gain 13.3dB
Drain Current-Max (Abs) (ID) 2A
Power - Output 4.3W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 6V
RoHS Status RoHS Compliant
Просмотр сходства
RFM04U6P(TE12L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, RFM04U6P(TE12L,F) reference price.Toshiba Semiconductor and Storage. RFM04U6P(TE12L,F) parameters, RFM04U6P(TE12L,F) Datasheet PDF and pin diagram description download.You can use the RFM04U6P(TE12L,F) Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find RFM04U6P(TE12L,F) pin diagram and circuit diagram and usage method of function,RFM04U6P(TE12L,F) electronics tutorials.You can download from the Anli.