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RN1402,LF Технические параметры

Toshiba Semiconductor and Storage  RN1402,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package S-Mini
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Max Power Dissipation 200mW
Element Configuration Single
Power - Max 200mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

RN1402,LF Документы

RN1402,LF brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, RN1402,LF reference price.Toshiba Semiconductor and Storage. RN1402,LF parameters, RN1402,LF Datasheet PDF and pin diagram description download.You can use the RN1402,LF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find RN1402,LF pin diagram and circuit diagram and usage method of function,RN1402,LF electronics tutorials.You can download from the Anli.