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- RN1405,LF
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RN1405,LF Технические параметры
Toshiba Semiconductor and Storage RN1405,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Current-Collector (Ic) (Max) | 100mA | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -55°C | |
| Base Part Number | RN140* | |
| Element Configuration | Single | |
| Power - Max | 200mW | |
| Transistor Type | NPN - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 50V | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Frequency - Transition | 250MHz | |
| Resistor - Base (R1) | 2.2 k Ω | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
RN1405,LF Документы
- DatasheetsRN1405,LF-Toshiba-datasheet-98445563.pdf
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