Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- /
- RN1902,LF(CT
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
RN1902,LF(CT Технические параметры
Toshiba Semiconductor and Storage RN1902,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Weight | 6.010099mg | |
| Collector-Emitter Breakdown Voltage | 50V | |
| hFEMin | 50 | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 200mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Polarity | NPN | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 250MHz | |
| Emitter Base Voltage (VEBO) | 10V | |
| Resistor - Base (R1) | 10k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 10k Ω | |
| RoHS Status | RoHS Compliant |
RN1902,LF(CT Документы
- DatasheetsRN1901-06
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ