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RN1903,LF(CT Технические параметры

Toshiba Semiconductor and Storage  RN1903,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Packaging Cut Tape (CT)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 200mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status RoHS Compliant
Просмотр сходства

RN1903,LF(CT Документы

RN1903,LF(CT brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, RN1903,LF(CT reference price.Toshiba Semiconductor and Storage. RN1903,LF(CT parameters, RN1903,LF(CT Datasheet PDF and pin diagram description download.You can use the RN1903,LF(CT Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find RN1903,LF(CT pin diagram and circuit diagram and usage method of function,RN1903,LF(CT electronics tutorials.You can download from the Anli.