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RN1906FE,LF(CT Технические параметры

Toshiba Semiconductor and Storage  RN1906FE,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Collector-Emitter Breakdown Voltage 50V
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 100mW
Свойство продукта Значение свойства
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Просмотр сходства
RN1906FE,LF(CT brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, RN1906FE,LF(CT reference price.Toshiba Semiconductor and Storage. RN1906FE,LF(CT parameters, RN1906FE,LF(CT Datasheet PDF and pin diagram description download.You can use the RN1906FE,LF(CT Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find RN1906FE,LF(CT pin diagram and circuit diagram and usage method of function,RN1906FE,LF(CT electronics tutorials.You can download from the Anli.