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RN2313,LF Технические параметры

Toshiba Semiconductor and Storage  RN2313,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Transistor Polarity PNP
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 100 mW
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 120
Unit Weight 0.000212 oz
Typical Input Resistor 47 kOhms
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Peak DC Collector Current 100 mA
Channel Mode Enhancement
Manufacturer Toshiba
Свойство продукта Значение свойства
Brand Toshiba
Maximum DC Collector Current 100 mA
Maximum Operating Frequency 200 MHz
RoHS Details
Collector- Emitter Voltage VCEO Max 50 V
Series -
Packaging Cut Tape
Subcategory Transistors
Configuration Single
Power - Max 100 mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 200 MHz
Resistor - Base (R1) 47 kOhms
Continuous Collector Current 100
Product Category Bipolar Transistors - Pre-Biased
RN2313,LF brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, RN2313,LF reference price.Toshiba Semiconductor and Storage. RN2313,LF parameters, RN2313,LF Datasheet PDF and pin diagram description download.You can use the RN2313,LF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find RN2313,LF pin diagram and circuit diagram and usage method of function,RN2313,LF electronics tutorials.You can download from the Anli.