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RN2904FE,LXHF(CT Технические параметры

Toshiba Semiconductor and Storage  RN2904FE,LXHF(CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current-Collector (Ic) (Max) 100mA
Qualification AEC-Q200
Emitter- Base Voltage VEBO 10 V
Typical Resistor Ratio 1
Pd - Power Dissipation 100 mW
Transistor Polarity PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 80 at - 10 mA, - 5 V
Typical Input Resistor 47 kOhms
Factory Pack QuantityFactory Pack Quantity 4000
Mounting Styles SMD/SMT
Part # Aliases RN2904FE,LXHF(CB
Manufacturer Toshiba
Свойство продукта Значение свойства
Brand Toshiba
Maximum Operating Frequency 200 MHz
RoHS Details
Collector- Emitter Voltage VCEO Max 50 V
Series Automotive, AEC-Q101
Packaging MouseReel
Subcategory Transistors
Configuration Dual
Power - Max 100mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type 2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 47kOhms
Continuous Collector Current 100 mA
Resistor - Emitter Base (R2) 47kOhms
Product Category Bipolar Transistors - Pre-Biased
Просмотр сходства
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