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RN2910FE,LF(CT Технические параметры

Toshiba Semiconductor and Storage  RN2910FE,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Current-Collector (Ic) (Max) 100mA
hFEMin 120
Packaging Cut Tape (CT)
Published 2016
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Свойство продукта Значение свойства
Polarity PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -5V
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
Просмотр сходства
RN2910FE,LF(CT brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, RN2910FE,LF(CT reference price.Toshiba Semiconductor and Storage. RN2910FE,LF(CT parameters, RN2910FE,LF(CT Datasheet PDF and pin diagram description download.You can use the RN2910FE,LF(CT Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find RN2910FE,LF(CT pin diagram and circuit diagram and usage method of function,RN2910FE,LF(CT electronics tutorials.You can download from the Anli.