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- RN4606(TE85L,F)
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RN4606(TE85L,F) Технические параметры
Toshiba Semiconductor and Storage RN4606(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 11 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| hFEMin | 80 | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 300mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Polarity | NPN, PNP | |
| Element Configuration | Dual | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 100μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 200MHz 250MHz | |
| Emitter Base Voltage (VEBO) | 5V | |
| Resistor - Base (R1) | 4.7k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 47k Ω | |
| RoHS Status | RoHS Compliant |
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