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RN4981,LXHF(CT Технические параметры

Toshiba Semiconductor and Storage  RN4981,LXHF(CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current-Collector (Ic) (Max) 100mA
Qualification AEC-Q101
Emitter- Base Voltage VEBO - 10 V, + 10 V
Typical Resistor Ratio 1
Pd - Power Dissipation 200 mW
Transistor Polarity PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 30
Typical Input Resistor 4.7 kOhms
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Part # Aliases RN4981,LXHF(CB
Manufacturer Toshiba
Свойство продукта Значение свойства
Brand Toshiba
Maximum DC Collector Current - 100 mA, + 100 mA
Maximum Operating Frequency 200 MHz, 250 MHz
RoHS Details
Collector- Emitter Voltage VCEO Max - 50 V, + 50 V
Series -
Packaging MouseReel
Subcategory Transistors
Configuration Single
Power - Max 200mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 250MHz, 200MHz
Resistor - Base (R1) 4.7kOhms
Continuous Collector Current - 100 mA, + 100 mA
Resistor - Emitter Base (R2) 4.7kOhms
Product Category Bipolar Transistors - Pre-Biased
Просмотр сходства
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