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- RN4982FE,LF(CT
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RN4982FE,LF(CT Технические параметры
Toshiba Semiconductor and Storage RN4982FE,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Weight | 3.005049mg | |
| Current-Collector (Ic) (Max) | 100mA | |
| hFEMin | 50 | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 100mW | |
| Polarity | NPN, PNP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | -50V | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | 250MHz | |
| Emitter Base Voltage (VEBO) | -10V | |
| Resistor - Base (R1) | 10k Ω | |
| Continuous Collector Current | -100mA | |
| Resistor - Emitter Base (R2) | 10k Ω | |
| RoHS Status | RoHS Compliant |
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