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SSM3J328R,LF Технические параметры

Toshiba Semiconductor and Storage  SSM3J328R,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Turn Off Delay Time 107 ns
Operating Temperature 150°C TJ
Packaging Digi-Reel®
Series U-MOSVI
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position DUAL
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 32 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29.8m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.0298Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 24A
Radiation Hardening No
RoHS Status RoHS Compliant

SSM3J328R,LF Документы

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