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SSM3K16FV,L3F Технические параметры

Toshiba Semiconductor and Storage  SSM3K16FV,L3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Power Dissipation (Max) 150mW (Ta)
Continuous Drain Current Id 0.1
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-On Delay Time 70 ns
Vgs th - Gate-Source Threshold Voltage 600 mV
Pd - Power Dissipation 150 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 10 V, + 10 V
Unit Weight 0.000053 oz
Minimum Operating Temperature -
Factory Pack QuantityFactory Pack Quantity 8000
Mounting Styles SMD/SMT
Forward Transconductance - Min 40 mS
Channel Mode Enhancement
Свойство продукта Значение свойства
Manufacturer Toshiba
Brand Toshiba
Qg - Gate Charge -
Tradename MOSVI
Rds On - Drain-Source Resistance 3 Ohms
RoHS Details
Typical Turn-Off Delay Time 125 ns
Id - Continuous Drain Current 100 mA
Series -
Operating Temperature 150°C
Packaging Cut Tape
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 9.3 pF @ 3 V
Drain to Source Voltage (Vdss) 20 V
Vgs (Max) ±10V
Product Type MOSFET
Channel Type N
FET Feature -
Product Category MOSFET
Просмотр сходства
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