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SSM3K329R,LF Технические параметры

Toshiba Semiconductor and Storage  SSM3K329R,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Turn Off Delay Time 6.4 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series U-MOSIII
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 126m Ω @ 1A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 123pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4V
Vgs (Max) ±12V
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Height 880μm
RoHS Status RoHS Compliant
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