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Toshiba Semiconductor and Storage SSM3K35MFV(TPL3) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 11 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 180mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V 4V | |
| Power Dissipation (Max) | 150mW Ta | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | π-MOSVI | |
| Published | 2007 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 150mW | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 50mA, 4V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V | |
| Vgs (Max) | ±10V | |
| Continuous Drain Current (ID) | 180mA | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain to Source Breakdown Voltage | 20V | |
| Height | 500μm | |
| Length | 1.2mm | |
| Width | 800μm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |