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SSM5N16FU,LF Технические параметры

Toshiba Semiconductor and Storage  SSM5N16FU,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package USV
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 100mA (Ta)
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-On Delay Time 70 ns
Vgs th - Gate-Source Threshold Voltage 600 mV
Pd - Power Dissipation 200 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 10 V, + 10 V
Unit Weight 0.000212 oz
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Forward Transconductance - Min 40 mS
Channel Mode Enhancement
Manufacturer Toshiba
Brand Toshiba
Свойство продукта Значение свойства
Tradename MOSVI
Rds On - Drain-Source Resistance 3 Ohms
RoHS Details
Typical Turn-Off Delay Time 125 ns
Id - Continuous Drain Current 100 mA
Series -
Operating Temperature 150°C
Packaging Cut Tape
Subcategory MOSFETs
Technology Si
Configuration Dual
Number of Channels 2 ChannelChannel
Power - Max 200mW (Ta)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 20V
Product Type MOSFET
FET Feature Standard
Product Category MOSFET
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