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SSM6J213FE(TE85L,F Технические параметры

Toshiba Semiconductor and Storage  SSM6J213FE(TE85L,F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Current - Continuous Drain (Id) @ 25℃ 2.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.5V 4.5V
Power Dissipation (Max) 500mW Ta
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series U-MOSVI
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Capacitance 290pF
Reach Compliance Code unknown
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 103m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
RoHS Status RoHS Compliant
Просмотр сходства
SSM6J213FE(TE85L,F brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, SSM6J213FE(TE85L,F reference price.Toshiba Semiconductor and Storage. SSM6J213FE(TE85L,F parameters, SSM6J213FE(TE85L,F Datasheet PDF and pin diagram description download.You can use the SSM6J213FE(TE85L,F Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find SSM6J213FE(TE85L,F pin diagram and circuit diagram and usage method of function,SSM6J213FE(TE85L,F electronics tutorials.You can download from the Anli.