Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Toshiba Semiconductor and Storage SSM6N17FU(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 100mA Ta | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 40 ns | |
| Operating Temperature | 150°C | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 200mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 200mW | |
| Turn On Delay Time | 100 ns | |
| Power - Max | 200mW Ta | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 20 Ω @ 10mA, 4V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 3V | |
| Continuous Drain Current (ID) | 100mA | |
| Threshold Voltage | 1.5V | |
| Gate to Source Voltage (Vgs) | 7V | |
| Drain Current-Max (Abs) (ID) | 0.1A | |
| Dual Supply Voltage | 50V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Nominal Vgs | 1.5 V | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant |