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SSM6N44FE,LM Технические параметры

Toshiba Semiconductor and Storage  SSM6N44FE,LM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 16 Weeks
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 6Pins
Transistor Element Material SILICON
Manufacturer Package Identifier SON6-P-0.50
Turn Off Delay Time 200 ns
Number of Elements 2 Elements
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Power Dissipation 150mW
Terminal Form FLAT
Base Part Number SSM6N44
Number of Channels 2Channels
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 50 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 8.5pF @ 3V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 7Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 600μm
RoHS Status RoHS Compliant
Radiation Hardening No

SSM6N44FE,LM Документы

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