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Toshiba Semiconductor and Storage SSM6N7002BFU,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Max Power Dissipation | 300mW | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Base Part Number | SSM6N7002 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150mW | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.1 Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 3.1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 25V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (ID) | 200mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 0.2A | |
| Drain to Source Breakdown Voltage | 60V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | RoHS Compliant |