Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
TBC857B,LM Технические параметры
Toshiba Semiconductor and Storage TBC857B,LM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2016 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Max Power Dissipation | 320mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Power - Max | 320mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 650mV | |
| Max Collector Current | 150mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA 5V | |
| Current - Collector Cutoff (Max) | 30nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 100mA, 5mA | |
| Transition Frequency | 80MHz | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 80MHz | |
| RoHS Status | RoHS Compliant |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ