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TDTA114E,LM Технические параметры

Toshiba Semiconductor and Storage  TDTA114E,LM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Pd - Power Dissipation 320 mW
Transistor Polarity PNP
Typical Input Resistor 10 kOhms
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Peak DC Collector Current 100 mA
Channel Mode Enhancement
Manufacturer Toshiba
Brand Toshiba
Свойство продукта Значение свойства
Maximum DC Collector Current 100 mA
Collector- Emitter Voltage VCEO Max 50 V
Series -
Packaging Cut Tape
Subcategory Transistors
Configuration Single
Power - Max 320 mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Resistor - Base (R1) 10 kOhms
Continuous Collector Current 100 mA
Product Category Bipolar Transistors - Pre-Biased
Просмотр сходства
TDTA114E,LM brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, TDTA114E,LM reference price.Toshiba Semiconductor and Storage. TDTA114E,LM parameters, TDTA114E,LM Datasheet PDF and pin diagram description download.You can use the TDTA114E,LM Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find TDTA114E,LM pin diagram and circuit diagram and usage method of function,TDTA114E,LM electronics tutorials.You can download from the Anli.