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TJ8S06M3L,LXHQ Технические параметры

Toshiba Semiconductor and Storage  TJ8S06M3L,LXHQ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK+
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Power Dissipation (Max) 27W (Tc)
Base Product Number TJ8S06
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-On Delay Time 14 ns
Vgs th - Gate-Source Threshold Voltage 3 V
Qualification AEC-Q101
Pd - Power Dissipation 27 W
Transistor Polarity P-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 10 V
Unit Weight 0.012699 oz
Minimum Operating Temperature -
Factory Pack QuantityFactory Pack Quantity 2000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Part # Aliases TJ8S06M3L,LXHQ(O
Свойство продукта Значение свойства
Manufacturer Toshiba
Brand Toshiba
Qg - Gate Charge 19 nC
Rds On - Drain-Source Resistance 104 mOhms
RoHS Details
Typical Turn-Off Delay Time 140 ns
Id - Continuous Drain Current 8 A
Series U-MOSVI
Operating Temperature 175°C
Packaging Cut Tape
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type P-Channel
Rds On (Max) @ Id, Vgs 104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Rise Time 6 ns
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) +10V, -20V
Product Type MOSFET
Transistor Type 1 P-Channel
FET Feature -
Product Category MOSFET
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