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TK16E60W5,S1VX Технические параметры

Toshiba Semiconductor and Storage  TK16E60W5,S1VX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25℃ 15.8A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 130W Tc
Operating Temperature 150°C TJ
Packaging Tube
Series DTMOSIV
Свойство продукта Значение свойства
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 7.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 790μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Continuous Drain Current (ID) 15.8A
RoHS Status RoHS Compliant
Просмотр сходства
TK16E60W5,S1VX brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, TK16E60W5,S1VX reference price.Toshiba Semiconductor and Storage. TK16E60W5,S1VX parameters, TK16E60W5,S1VX Datasheet PDF and pin diagram description download.You can use the TK16E60W5,S1VX Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TK16E60W5,S1VX pin diagram and circuit diagram and usage method of function,TK16E60W5,S1VX electronics tutorials.You can download from the Anli.