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TK31N60W5,S1VF Технические параметры
Toshiba Semiconductor and Storage TK31N60W5,S1VF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Weight | 38.000013g | |
| Current - Continuous Drain (Id) @ 25℃ | 30.8A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 230W Tc | |
| Turn Off Delay Time | 165 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Series | DTMOSIV | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Turn On Delay Time | 120 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 99m Ω @ 15.4A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V | |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V | |
| Rise Time | 80ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 8.5 ns | |
| Continuous Drain Current (ID) | 30.8A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 600V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
Индекс :
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