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TK62J60W,S1VQ Технические параметры

Toshiba Semiconductor and Storage  TK62J60W,S1VQ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Supplier Device Package TO-3P(N)
Current - Continuous Drain (Id) @ 25℃ 61.8A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 400W Tc
Turn Off Delay Time 310 ns
Operating Temperature 150°C TJ
Packaging Tube
Series DTMOSIV
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 400W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 38mOhm @ 30.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 3.1mA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 300V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 58ns
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 61.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 6.5nF
FET Feature Super Junction
Drain to Source Resistance 33mOhm
Rds On Max 38 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

TK62J60W,S1VQ Документы

TK62J60W,S1VQ brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, TK62J60W,S1VQ reference price.Toshiba Semiconductor and Storage. TK62J60W,S1VQ parameters, TK62J60W,S1VQ Datasheet PDF and pin diagram description download.You can use the TK62J60W,S1VQ Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TK62J60W,S1VQ pin diagram and circuit diagram and usage method of function,TK62J60W,S1VQ electronics tutorials.You can download from the Anli.