Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - Single
- /
- TK6A53D(STA4,Q,M)
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
TK6A53D(STA4,Q,M) Технические параметры
Toshiba Semiconductor and Storage TK6A53D(STA4,Q,M) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220SIS | |
| Current - Continuous Drain (Id) @ 25℃ | 6A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 35W Tc | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Series | π-MOSVII | |
| Published | 2010 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
| Rise Time | 18ns | |
| Drain to Source Voltage (Vdss) | 525V | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 8 ns | |
| Continuous Drain Current (ID) | 6A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Input Capacitance | 600pF | |
| Rds On Max | 1.3 Ω | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ