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TLP292(E Технические параметры
Toshiba Semiconductor and Storage TLP292(E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optoisolators - Transistor, Photovoltaic Output | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SOIC (0.179, 4.55mm Width) | |
| Surface Mount | YES | |
| Collector-Emitter Saturation Voltage | 300mV | |
| Current Transfer Ratio-Min | 50% @ 5mA | |
| Number of Elements | 1 Element | |
| Usage Level | Military grade | |
| Operating Temperature | -55°C~125°C | |
| Packaging | Tube | |
| Published | 2016 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Additional Feature | UL RECOGNIZED | |
| Max Power Dissipation | 200mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage - Isolation | 3750Vrms | |
| Output Type | Transistor | |
| Configuration | SINGLE | |
| Number of Channels | 1Channel | |
| Voltage - Forward (Vf) (Typ) | 1.25V | |
| Input Type | AC, DC | |
| Collector Emitter Voltage (VCEO) | 80V | |
| Max Collector Current | 50mA | |
| Rise / Fall Time (Typ) | 2μs 3μs | |
| Forward Current-Max | 0.05A | |
| Max Input Current | 50mA | |
| Current Transfer Ratio (Max) | 600% @ 5mA | |
| Turn On / Turn Off Time (Typ) | 3μs, 3μs | |
| Dark Current-Max | 50000nA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
TLP292(E Документы
- DatasheetsTLP292
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