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TLP293(GB-TPL,E Технические параметры

Toshiba Semiconductor and Storage  TLP293(GB-TPL,E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SOIC (0.179, 4.55mm Width)
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 80V
Current Transfer Ratio-Min 100% @ 5mA
Number of Elements 1 Element
Turn Off Delay Time 3 μs
Usage Level Military grade
Operating Temperature -55°C~125°C
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL RECOGNIZED
Max Power Dissipation 200mW
Voltage - Isolation 3750Vrms
Output Type Transistor
Configuration SINGLE
Свойство продукта Значение свойства
Number of Channels 1Channel
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.25V
Input Type DC
Turn On Delay Time 3 μs
Forward Current 10mA
Max Output Voltage 80V
Output Current per Channel 50mA
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 50mA
Rise / Fall Time (Typ) 2μs 3μs
Reverse Voltage 5V
Max Input Current 50mA
Current Transfer Ratio (Max) 600% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Max Junction Temperature (Tj) 125°C
Vce Saturation (Max) 300mV
Ambient Temperature Range High 125°C
Dark Current-Max 80nA
Height 2.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
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TLP293(GB-TPL,E Документы

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