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TLP620(F) Технические параметры

Toshiba Semiconductor and Storage  TLP620(F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4Pins
Collector-Emitter Saturation Voltage 400mV
Current Transfer Ratio-Min 50% @ 5mA
Number of Elements 1 Element
Operating Temperature -55°C~100°C
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL RECOGNIZED
Max Power Dissipation 250mW
Voltage - Isolation 5000Vrms
Свойство продукта Значение свойства
Output Type Transistor
Configuration SINGLE
Number of Channels 1Channel
Voltage 55V
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.15V
Input Type AC, DC
Forward Current 16mA
Max Output Voltage 55V
Output Current per Channel 50mA
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 10mA
Rise / Fall Time (Typ) 2μs 3μs
Max Input Current 60mA
Current Transfer Ratio (Max) 600% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Radiation Hardening No
RoHS Status RoHS Compliant

TLP620(F) Документы

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