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Toshiba Semiconductor and Storage TPC6107(TE85L,F,M) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Contact Plating | Silver, Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Number of Pins | 6Pins | |
Supplier Device Package | VS-6 (2.9x2.8) | |
Current - Continuous Drain (Id) @ 25℃ | 4.5A Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 2V 4.5V | |
Power Dissipation (Max) | 700mW Ta | |
Turn Off Delay Time | 142 ns | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | U-MOSIV | |
Published | 2009 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Max Operating Temperature | 150°C |
Свойство продукта | Значение свойства | |
---|---|---|
Min Operating Temperature | -55°C | |
Power Dissipation | 2.2W | |
FET Type | P-Channel | |
Rds On (Max) @ Id, Vgs | 55mOhm @ 2.2A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 200μA | |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 9.8nC @ 5V | |
Rise Time | 145ns | |
Drain to Source Voltage (Vdss) | 20V | |
Vgs (Max) | ±12V | |
Fall Time (Typ) | 92 ns | |
Continuous Drain Current (ID) | 4.5A | |
Gate to Source Voltage (Vgs) | 12V | |
Drain to Source Breakdown Voltage | -20V | |
Input Capacitance | 680pF | |
Drain to Source Resistance | 55mOhm | |
Rds On Max | 55 mΩ | |
Radiation Hardening | No | |
RoHS Status | RoHS Compliant |