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TPC8110(TE12L,Q,M) Технические параметры

Toshiba Semiconductor and Storage  TPC8110(TE12L,Q,M) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Supplier Device Package 8-SOP (5.5x6.0)
Current - Continuous Drain (Id) @ 25℃ 8A Ta
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Power Dissipation (Max) 1W Ta
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series U-MOSIII
Свойство продукта Значение свойства
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
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TPC8110(TE12L,Q,M) Документы

TPC8110(TE12L,Q,M) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, TPC8110(TE12L,Q,M) reference price.Toshiba Semiconductor and Storage. TPC8110(TE12L,Q,M) parameters, TPC8110(TE12L,Q,M) Datasheet PDF and pin diagram description download.You can use the TPC8110(TE12L,Q,M) Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TPC8110(TE12L,Q,M) pin diagram and circuit diagram and usage method of function,TPC8110(TE12L,Q,M) electronics tutorials.You can download from the Anli.